ROSFET a Novel Device

94th Ind. Sci. Congress held at Annamalai University,Chidambaram
ISCA2007: 3nd- 7th, Januar, 2007 Paper No.112.

Physical Sciences:

The electronic liquid characteristics, model and theory of ROSFET device
Kotcherlakota Lakshmi Narayana,
(Affiliated to ANDHRA UNIVERSITY,Viskhapatnam)
A.G. L. College, P.G.Dept, Sankaramattam Road, near NH-5, Visakhapatnam-530016. Email Id : freekln@yahoo.co.in
Key words: ROSFET, electronic liquid, R and AR spins, Hall Resistance

ABSTRACT:

The electronic liquid characteristics of devices and their solid state chemistry yield rich information about the electron and quasi-particle or pseudo-spin configuration aspects of the residual disordered structures of both charge transport source-drain current carrying charge states and localized states of charges trapped by impurities. ROSFET design, model and the theory have been detailed in this article. The correlated motions of molecular topological excitation spin particles R and AR with the electrons and holes, relative to both the applied magnetic field and the gauge fields involved are solved using the Schrödinger equation using different sets of effective masses for electrons (holes) and R (AR) spin particles. The impurity structures of SiO2 insulating oxide and (dopant XY4) metal-oxide interface has been shown to give quantization of Hall resistances and fractional Hall resistances characterized by four quantum numbers n, m, γ, l, α, unlike in the Klaus von Klitzing theory of QHE or the FQHE of Clark and Maksym. The new quantum numbers m, γ describe the zx-plane and xy-plane oscillatory motion of the electrons (holes) and R (AR) with two different centers and the concomitant frequencies. Our model wave equation and its energy level features are detailed in terms of the new quantum numbers of the FQHE description. Laplace transform and the direct analytical solutions of the Schrödinger equation of the ROSFET have been obtained. The idea of Landau Levels description gets smeared out due to the consideration of a gauge magnetic field and the width of the device plays a role of quantization.